A chemical used in semiconductor manufacturing.
Gallium Arsenide. A III-V compound semiconductor material used for making optoelectronic devices and high-frequency ICs. GaAs has a higher electron mobility than silicon, thus having the capability of producing higher-speed devices. Electrons in GaAs travel at twice the speed of those of silicon.
Gallium Arsenide. A semiconductor material which has superior properties compared with Silicon, such has higher electron mobility. Used to make LEDs and microwave devices such as MMICs.
Gallium Arsenid [Halbleiter
Gallium Arsenide. A compound wafer with high speed switching capability that is used to make devices for processing and amplifying very high radio frequencies.
Gallium Arsenide. High-mobility semicoductor material used in low-noise microwave devices.
Gallium Arsenid [semi-conductor
Gallium Arsenide. A semiconductor which is used to fabricate high speed transistors.
A 3:5 valence high-speed semiconductor formed from a mixture of gallium and arsenic. GaAs transistors are approximately eight times faster than their silicon equivalents and use approximately one tenth of the power, but the material is difficult to manufacture and to work with.
Gallium Arsenide – a III-V compound semiconductor that has been used in making FETs since the 1970's. Its advantages in device and laser fabrication include very high speeds and switching, as well as very low power consumption and luminescence, thanks to the extremely high carrier mobility.
Gallium Arsenide, a compound semiconductor. Compared to silicon, GaAs is a relatively exotic and expensive material with superior photovoltaic efficiencies. GaAs PV modules are used in space applications and in similar situations where the greatest efficiency is required.
(n.) Gallium arsenide; an relatively new semiconductor material, still not yet fully mastered by chip manufacturers. GaAs components can run much faster than silicon-based components. See also CMOS.
Gallium Arsenide. An alternative semiconductor to silicon that is electronically faster, but more expensive and difficult to work with
Gallium Arsenide A compound semiconductor material in which active devices are fabricated. GaAs has a higher carrier mobility than silicon, thus it has the capability of producing higher speed devices.
Gallium Arsenide. A semiconducting material characterised by extremely fast switching times for transistors. The material also consumes relatively low power. In the early 80s, this material was thought to replace silicon. Research investment on this material has now lowered.
Abbreviation for gallium arsenide. Used in light emitters.
A photocathode material used on Gen III intensifiers.