Chemical Vapour Deposition. a technique used to deposit coatings, where chemicals are first vaporized, and then applied using an inert carrier gas such as nitrogen.
See Chemical Vapour Deposition Detonation Gun: A thermal spraying process in which the coating material is heated and accelerated to the workpiece by shock waves from a series of detonations or explosions from gas mixtures. Also known as D-Gun (Praxair).
Chemical Vapor Deposition. A process in which precursor chemicals, such as titanium tetrachloride and nitrogen gas, chemically react on the tool surface at temperatures of about 1000 degrees Centigrade to form a hard coating on the tool surface.
Chemical Vapor Deposition. A coating deposition process that is characterized by a chemical reaction producing the desired film material. CVD processes are usually performed in vacuum, but not always. Vacuum CVD processes generally are not performed in high vacuum conditions (as used in PVD processes). Many CVD processes are performed at elevated temperatures. Hard coatings such as TiC, TiN, and TiCN are CVD- coated above the tempering temperature of steels and require a re-heat treat step after coating. BryCoat provides CVD deposition of TiC for bearing balls.
Chemical vapor deposition. A process in which desired reinforcement material is deposited from vapor phase onto a continuous core; boron on tungsten, for example.
Synthetic diamond can be made by the CVD (Chemical Vapour Deposition) process.
chemical vapor deposition (standard chip making procedure in which elements are deposited in thin layers in a vacuum)
Chemical Vapour Deposition is the deposition of a coating by means of a chemical reaction in gases. In the case of standard CVD, the reaction is enabled through the high temperature of the process (800-1050(°) C).
Chemical Vapor Deposition. A process for growing thin films on a substrate, in which a gas containing the required molecules is converted into a plasma by heating it to extremely high temperatures using microwaves. The plasma carries atoms to the surface of the substrate where they are attracted to the crystalline structure of the substrate. This underlying structure acts as a template. The new atoms continue to develop the structure to build up a layer on the substrate's surface.
chemical vapor deposition. The use of gaseous precursor molecules to form solid films or powders. The process is widely used in the fabrication of semiconductors.
Chemical Vapor Deposition is a process for depositing thin films from a chemical reaction of a vapor or gas.
chemical vapor deposition. A technique used to deposit thin layers of coatings on a substrate . In CVD, chemicals are vaporized and then applied to the substrate using an inert gas such as nitrogen as a carrier. CVD is used in the production of microchips, integrated circuits, sensors, and protective coatings.
Chemical vapor deposition. Deposition of thin films (usually dielectrics/insulators) on silicon wafers by placing the wafers in a mixture of gases which react at the surface of the wafers. CVD can be done at medium to high temperature in a furnace, or in a CVD reactor in which the wafers are heated but the walls of the reactor are not. Plasma enhanced CVD avoids the need for a high temperature by exciting the reactant gases into a plasma.
See chemical vapor deposition.
Chemical Vapor Deposition: A SEMICON process used to deposit material onto a wafer using chemical reactions on the wafer surface to modify the material during processing.
Chemical Vapour Deposition. The deposition of a coating by means of a chemical reaction in gases in a chamber producing components which deposit on and adhere to the substrate.
Chemical Vapor Deposition. processes are used to deposit dielectric films in an integrated circuit, as well as for depositing conductive metal layers, particularly those with line widths too small for effective deposition with PVD or other deposition technologies. CVD may be thought of as a high-tech spray painting process where paint vapor coats all the surfaces uniformly.
Chemical Vapor Deposition. Deposits a layer of SiO2 on the wafer which will prevent dopants and impurities from migrating out of the wafer's backside during epi or heat treatments. Such migration is called auto-doping.
This high temperature coating process, as it relates to tooling applications, involves the deposition of a solid material onto a heated substrate via a chemical reaction from a gas phase. This process can be done in atmosphere or vacuum. Because this is a chemical bond, the bond strength is many times stronger than achieved through the PVD process. CVD is typically used for carbide inserts, forming tools and other high load applications. Due to the high processing temperature (1925° F), there are some material and tolerance limitations. Due to the high processing temperature, all tool steels and High Speed Steels (HSS) must be heat treated after this coating process.
CHEMICAL VAPOR DEPOSITION. A method of depositing thin semiconductor films used to make certain types of solar photovoltaic devices. With this method, a substrate is exposed to one or more vaporized compounds, one or more of which contain desirable constituents. A chemical reaction is initiated, at or near the substrate surface, to produce the desired material that will condense on the substrate.
