The growth of a crystal of one mineral on or around a crystal of another mineral.
Any process by which a single crystal layer of a material is grown on top of a substrate. When the grown layer is identical to the substrate material, the epitaxy is referred to as homo-epitaxy (mostly used in silicon material applications). Hetero-epitaxy, which refers to growth of a given single crystal material on a different material, is mostly used in compound semiconductor applications.
It is the growth of a crystal of one mineral over the crystal of another.
growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate
process by which a thin "epitaxial" layer of single-crystal material is deposited on single-crystal substrate; epitaxial growth occurs in such way that the crystallographic structure of the substrate is reproduced in the growing material; also crystalline defects of the substrate are reproduced in the growing material. Although crystallographic structure of the substrate is reproduced, doping levels and the conductivity type of a epitaxial layer is controlled independently of the substrate; e.g. the epitaxial layer can be made more pure chemically than the substrate; learn more.
The growth of a crystal layer of one mineral on the crystal base of another mineral in such a manner that the crystalline orientation of the layer mimics that of the substrate.
A process technology used in some semiconductor designs where a pure silicon crystalline structure is deposited or "grown" on a bare wafer, enabling a high-purity starting point for building the semiconductor device.
Induced orientation of the lattice of a crystal of a surface deposit by the lattice of the substrate crystal.
A semiconductor manufacturing process in which a layer of silicon is grown on the surface of a silicon wafer. This new layer is grown because it possesses a unique crystalline structure or other desirable feature not found on the wafer itself.
Ball-shaped crystal growth into open space. Defined relation between the crystallographic orientation of a substrate and a coating. Can be observed on PVD coatings on Si wafers.
Epitaxy is a kind of interface between a thin film and a substrate. The term epitaxy (Greek; epi "above" and taxis "in ordered manner") describes an ordered crystalline growth on a monocrystalline substrate.
